In a semiconductor p-n diode, the doping concentrations on p-side and n-side are 10¹⁵ atoms/cm ³ and 10¹⁸ atoms/cm ³, respectively. Which one of the following statements is true ?

(B) The depletion region width is more on p-side compared to that in n-side

(A) Widths of depletion region on either side of the interface are equal

(C) The depletion region width is more on n-side compared to that in p-side

(D) No depletion region forms because of unequal doping concentrations on p and n-sides

Electronic Devices: JEE Main 2026 Physics question

JEE Main 2026 · 5 Apr, Evening shift · Q45

JEE Main 20265 Apr, Evening shiftPhysicsEasyElectronic Devices66× since 2002

In a semiconductor p-n diode, the doping concentrations on p-side and n-side are

10^{15}

atoms/cm

^3

and

10^{18}

atoms/cm

^3

, respectively. Which one of the following statements is true ?

JEE Main 2026 · 5 Apr, Evening shift · Q45

JEE Main 20265 Apr, Evening shiftPhysicsEasyElectronic Devices66× since 2002

In a semiconductor p-n diode, the doping concentrations on p-side and n-side are

10^{15}

atoms/cm

^3

and

10^{18}

atoms/cm

^3

, respectively. Which one of the following statements is true ?